SiC JFET dc characteristics under extremely high ambient temperatures

This paper reports on the measured dc characteristics of a SiC JFET device from room temperature up to 450◦C in order to evaluate the device’s capability for high-temperature operation. The authors packaged SiC JFET bare die into a dedicated high-temperature package to be able to perform experiments under extremely high ambient temperatures. The experimental results show that the device can operate at 450◦C, which is impossible for conventional Si devices, but the current capability of the SiC JFET diminishes with rising temperatures. For example, the saturation current becomes 20% at 450◦C with respect to the value at the room temperature.